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NTD5865N
N-Channel Power MOSFET
60 V, 43 A, 18 m W
Features
? Low Gate Charge
? Fast Switching
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
18 m W @ 10 V
I D MAX
43 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage
? Non ? Repetitive (t p < 10 m s)
Symbol
V DSS
V GS
V GS
Value
60
" 20
" 30
Unit
V
V
V
G
D
Current (R q JC )
Power Dissipation
T C = 25 ° C
Continuous Drain T C = 25 ° C
Steady T C = 100 ° C
State
(R q JC )
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I D
P D
I DM
T J , T stg
43
31
71
192
? 55 to
175
A
W
A
° C
S
N ? CHANNEL MOSFET
4
4
3
Source Current (Body Diode)
Single Pulse Drain ? to ? Source L = 0.1 mH
Avalanche Energy
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
I AS
T L
43
36
27
260
A
mJ
A
° C
1 2
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
IPAK
CASE 369D
(Straight Lead)
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
4 Drain
Drain
Junction ? to ? Case (Drain)
R q JC
2.1
° C/W
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 49
1. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y
WW
5865N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 2
1
Publication Order Number:
NTD5865N/D
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